Micro-/Nano-Analysis

HRSEM - High resolution scanning electron microscope Zeiss Gemini Supra VP

• Highest resolution and excellent contrast at

  • high voltage imaging: 1,0 nm at 15 kV
  • low voltage imaging: 1,7 nm at 1 kV
  • ultra low voltage imaging: 4.0 nm at 0,1 kV
• Wide range of magnification - 12 - 980000x
• Variable pressure - mode (VP) allows examination of non-conducting specimens without preparation, 2 - 133 Pa, adjustable in steps of 1 Pa
• High current mode for analytical applications e.g EDX or EBSD, 4pA - 10nA (20 nA optional )
• In-lens detectors permits high image quality especially at low beam voltage
• Low magnetic fields at specimen assures stable electron beam for magnetic materials
• Large specimen chamber allows investigation of large samples
• Fully motorized 5 axes eucentric specimen stage gives firstly flexibility to handle large awkwardly shaped specimens and secondly possibility to relocate quickly the marked areas.

Figure below: Surface structure of a TiCN layer

Focussed Ion Beam/FE-SEM for cross beam operation, microstructuring, etching and deposition

• Ultra high resolution FESEM with unique GEMINI column (electron beam source)
• High performance CANION FIB (Focussed Ion Beam) column (Ga2+ ion beam source)
• CrossBeam-operation: high resolution live imaging during milling and polishing
• Endpoint detection for automated milling
• Optional multi-channel gas injection system for 5 different gases allows material deposition and enhanced or selective etching
• Super eucentric - 6 axes, fully motorised stage for exact position of coincidence point
• Automated TEM preparation software package
• Two infra-red CCD chamber cameras for safe specimen handling and navigation

On the figure below, a cross section cut by FIB (steel sheet):

Applications

• Cross sections of e.g. thin films, multilayer systems or any structural elements of interest (e.g. investigation of interface processes)
• Etching and polishing of exact defined micro- or nano-surface areas (e.g. investigation of grain structure, failure analysis - voids, cracks, inclusions,..,).
• Cutting out of TEM thin foils
• Micro-structuring and prototyping of microsystems and electronic packages - deposition (e.g. W, Pt, Au or SiO2) and etching of defined shapes
• Qualitative and quantitative analysis using high resolution images and EDS-system.

EDS/EBSD spectroscopy for simultaneous collection of chemical and crystallographic data

The Sapphire Si(Li) LN (Liquid Nitrogen) Cooled EDS (Energy Dispersive Spectrum) detector offers the highest peak to background ratio and the best resolution (@ Mn K) available. Following analysis can be performed by EDS;

• Detection of elements - including light elements begining by Be
• Determination of phase composition
• Line scans - element distribution along a line
• Mapping - elements distribution in defined area
• Quantitative analysis
• Particle phase analysis

EBSD/EDS

The integrated system EDS/EBSD (Electron Back-Scattered Diffraction) enables the simultaneous collection of EDS (chemistry) and EBSD (crystallography) data, allowing direct correlation between the elemental content and microstructural aspects of the material being studied.

The EBSD-method enables the determination of:

• Grain orientation
• Texture (global, local)
• Grain size and grain size distribution
• Grain boundary characterisation
• Re-crystallization /deformed fraction
• Phase identification, distribution and transformation

Microstructure

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